INFLUENCE OF TECHNOLOGY OF RECEIPT OF THIN-FILMS OF CADMIUM TELLURIDE ON EFFICIENCY OF WORK OF SUN ELEMENTS ON THEIR BASIS

  • Hаnnа Kolomoets Zaporizhzhia State Engineering Academy
  • Sergey Khripko Zaporizhzhia State Engineering Academy
Keywords: efficiency coefficient, solar element, thin films, cadmium telluride, p-n transition, value of band gap

Abstract

The influence of different methods of production Cadmium Telluride thin-films on efficiency coefficient of solar elements on their base is observed. The prognosis about possibility of efficiency coefficient increasing up to the theoretical maximum is made. Different photo-electric transformers investigated on the basis of CdTe, namely, photo-electric transformers on the Schottky barrier, on homo- and heterotransitions, in combination with Cu2Te, CdS and transparent conducting oxide of indium-tin (ITO). The best results are got for sun elements on the basis of heterotransitions of n-dS/p-CdTe. Solar elements on the basis of heterosystem of CdS/CdTe are two configurations: "back" and "frontal". At "back" configuration at first the contact of transparent conducting oxide (transparent conducting oxide or TCO) is formed and ends with an opaque metallic contact. The order of height of layers matters very much, because on him both desirable and undesirable chemical reactions, and processes of diffusion, depend between layers. So, during "frontal" configuration in the process of heat treatment there is undesirable diffusion of metal in the layer of CdTe and CdS that renders negative influence on descriptions of heterotransition of CdS/CdTe. Therefore more preferable are solar elements of "back" configuration, which have higher efficiency of transformation. Telluride of cadmium differs in a most break between practically attained maximal efficiency coefficient of sun elements on its basis and by theoretical a maximum of efficiency coefficient as compared to other semiconductors; Its are exist large possibilities for the increase of efficiency coefficient of sun elements on the basis of CdTe, and in particular, thin-filmed sun elements. So large prospects are observed in the improvement of thin-filmed sun elements on the basis of heterotransitions of CdS-CdTe. In addition, the break of area of conductivity absents in such heterotransitions that compels to do supposition of about prospectivity search of optimal correlation of thicknesses of layers of two semiconductors in this heteropair.

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Published
2020-03-01
How to Cite
Kolomoets , H., & Khripko , S. (2020). INFLUENCE OF TECHNOLOGY OF RECEIPT OF THIN-FILMS OF CADMIUM TELLURIDE ON EFFICIENCY OF WORK OF SUN ELEMENTS ON THEIR BASIS. Scientific Journal "Metallurgy", (1(41), 69-72. Retrieved from http://metal.journalsofznu.zp.ua/index.php/journal/article/view/14